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| PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 55V RDS(on) = 0.07 G ID = 17A S Description Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applications. D 2 P ak T O -26 2 Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 68 3.8 45 0.30 20 71 10 4.5 6.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 3.3 40 Units C/W 04/19/04 IRFZ24NS/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 4.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- 4.9 34 19 27 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID =1mA 0.07 VGS =10V, ID = 10A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 10A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 20 ID = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 10A ns --- RG = 24 --- RD = 2.6, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 370 --- VGS = 0V 140 --- pF VDS = 25V 65 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 17 showing the A G integral reverse --- --- 68 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 10A, VGS = 0V --- 56 83 ns TJ = 25C, IF = 10A --- 120 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L =1.0mH RG = 25, IAS = 10A. (See Figure 12) Pulse width 280s; duty cycle 2%. Uses IRFZ24N data and test conditions ISD 10A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IRFZ24NS/LPbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , D rain-to-Source Current (A ) D I , D rain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 4 .5V 4.5V 20 s P U LS E W ID TH TC = 25C T J = 2 5C 0.1 1 10 100 1 A 1 0.1 1 2 0 s P U L S E W ID T H TJ = 17 5C T C = 175C 10 100 A V D S , D rain-to-S ourc e V oltage (V ) V DS , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 R D S (on ) , D rain -to-S ou rc e O n R es is tan c e (N orm a liz ed) I D = 17 A I D , D rain-to-So urce C urren t (A ) 2.5 TJ = 2 5 C T J = 1 7 5 C 2.0 10 1.5 1.0 0.5 1 4 5 6 7 V DS = 2 5V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 1 0V 100 120 140 160 180 A V G S , G ate-to -So urce Voltag e (V) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFZ24NS/LPbF 700 600 C , Capacitance (pF) 500 C iss 400 C oss 300 V G S , G ate-to-S ource V oltage (V ) V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd 20 I D = 10 A V D S = 44 V V D S = 28 V 16 12 8 200 C rss 4 100 0 1 10 100 A 0 0 4 8 FO R TE S T C IRC UIT S E E FIG U R E 1 3 12 16 20 A V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I S D , R everse Drain C urrent (A ) O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) T J = 1 75 C TJ = 25 C 10 I D , D rain Current (A ) 100 10 s 10 100 s 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V G S = 0V 1.8 A 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 1m s 10m s 100 A 2.0 V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFZ24NS/LPbF V DS 20 RD VGS RG D.U.T. + 16 -V DD I D , Drain Current (A) 10V 12 Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit VDS 90% 4 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFZ24NS/LPbF 140 E A S , S ingle Pulse Avalanc he E nergy (m J) VDS L D.U.T. TOP 120 B O T TO M ID 4.2 A 7.2A 1 0A RG + - 100 VDD 80 10 V IAS tp 0.01 60 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 40 20 0 V D D = 25 V 25 50 75 100 125 150 175 A S tarting T J , J unc tion T em perature (C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFZ24NS/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFZ24NS/LPbF D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 0 2, 2000 IN T H E AS S E MB L Y L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R F 53 0S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE IRFZ24NS/LPbF TO-262 Package Outline TO-262 Part Marking Information E X AM P L E : T H IS IS AN IR L 3103 L L OT COD E 178 9 AS S E MB L E D ON W W 19 , 199 7 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R D AT E COD E YE AR 7 = 19 97 WE E K 19 L IN E C OR IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R D AT E COD E P = D E S IGN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) YE AR 7 = 19 97 WE E K 19 A = AS S E MB L Y S IT E COD E IRFZ24NS/LPbF D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 5.4 2 (.6 0 9 ) 1 5.2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0.9 0 (.4 2 9 ) 1 0.7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) F E E D D IRE CTIO N 13 .5 0 (.53 2) 12 .8 0 (.50 4) 27 .40 (1.0 79) 23 .90 (.94 1) 4 3 30 .0 0 (14.1 73) MAX. 60.00 (2.3 62) M IN . NO TES : 1. C O M F O R M S T O E IA-4 18. 2. C O N TR O LL IN G D IM E N S IO N : M IL LIM E T E R . 3. D IM E N S IO N M E A SU R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U TE R E D G E. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30 .40 (1.19 7) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 |
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